Rich Dan: Time-Resolved Cathodoluminescence Studies of Semiconductor Quantum Dots Grown On Silicon SubstratesWe study the optical properties of vertically stacked GaN/AlN self-assembled quantum dots (SAQDs) grown on Si substrates. We use temporally and spatially resolved cathodoluminescence (CL). CL is generated by the injection of a tunable and position-controllable high-energy electron beam from a scanning electron microscope (SEM) into a semiconductor sample. The electron beam generates a large density of electron-hole pairs, many of which recombine radiatively across the bandgap of the semiconductor, thereby generating the luminescence which is subsequently detected and analyzed. Potential applications of these quantum dots include light source for UV-blue-green LEDs, lasers, optical information storage, single photon emitters and sources of entangled photons (quantum information technology).
While the presence of thermal stress-induced micro-cracks is clearly
undesirable when attempting to obtain high-quality thin film growth of
III-Nitride films and SAQDs on Si substrates, the presence of
micro-cracking however enables a study of interesting stress-induced
energy shifts and lifetime changes in the QD optical transitions that
can be measured with a high-resolution spatially resolved probe, such
as with CL. Normally, it is difficult to locally perturb the strain
tensor of QDs in a reliable and reproducible way with an external
stress. We have found such a way using the micro-cracks as stressors in
our research. Three-dimensional 6*6 |
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Figure 1: Growth process of Self Assembled Quantum Dots (SAQD) in the Stranski-Krastanov growth mode. Click to enlarge. |
Figure 2: Schematic showing the structure of SAQD sample. Click to enlarge. |
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Figure 3: Schematic explaining the CL experimental method used in studying the effects of the micro-cracks. |
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Further Details and Recent Experimental Results. |
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